BS IEC 60747-9:2019 BSl Standards Publication Semiconductor devices Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs) bsi. BSIEC60747-9:2019 BRITISH STANDARD Nationalforeword This British Standard is the UK implementation of IEC 60747-9:2019. It supersedes BS IEC 60747-9:2007, which is withdrawn. TheUKparticipationinitspreparation was entrustedtoTechnical CommitteeEPL/47,Semiconductors. A listoforganizationsrepresented onthis committee can be obtained on requestto its secretary. This publication does not purportto include all the necessary provisions of a contract.Users are responsiblefor its correct application. @TheBritish Standards Institution2019 Published by BSI Standards Limited 2019 ISBN 9780580947148 ICS31.080.01;31.080.30 Compliance with a British Standard cannot confer immunity from legalobligations. This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 November 2019. Amendments/corrigendaissuedsincepublication Date Text affected BSIEC60747-9:2019 IEC IEC 60747-9 Edition3.02019-11 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductordevices- Part 9:Discrete devices-Insulated-gate bipolar transistors (IGBTs) Dispositifs a semiconducteurs Partie 9:Dispositifs discrets-Transistors bipolaires a grilleisolee (IGBT) INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.01; 31.080.30 ISBN 978-2-8322-7530-6 Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agree.